sot-23 plastic-encapsulate mosfets CJ3406 n-channel enhancement mode field effect transistor description the CJ3406 use advanced trench tec hnology to provide excellent r ds(on) and low gate charge. this devic e is suitable for use as a load switch or in pwm applications. marking: r6 maximum ratings ( t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current i d 3.6 a drain current-pulsed (note 1) i dm 15 a power dissipation p d 0.35 w thermal resistance from junction to ambient r ja 357 /w junction temperature t j 150 storage temperature t stg -55~ +150 so t -23 1. gate 2. source 3. drain a,dec,2010 a,dec,2010 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static parameters drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 30 v zero gate voltage drain current i dss v ds =24v,v gs = 0v 1 a gate-body leakage current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =250a 1 3 v v gs =10v, i d =3.6a 65 m ? drain-source on-resistance (note 2) r ds(on) v gs =4.5v, i d =2.8a 105 m ? forward tranconductance (note 2) g fs v ds =5v, i d =3.6a 3 s diode forward voltage v sd i s =1a 1 v dynamic parameters (note 3) input capacitance c iss 375 pf output capacitance c oss 57 pf reverse transfer capacitance c rss v ds =15v,v gs =0v,f =1mhz 39 pf gate resistance r g v ds =0v,v gs =0v,f =1mhz 6 ? switching parameters (note 3) turn-on delay time t d(on) 4.6 ns turn-on rise time t r 1.9 ns turn-off delay time t d(off) 20.1 ns turn-off fall time t f v gs =10v,v ds =15v, r l =2.2 ? ,r gen =3 ? 2.6 ns notes : 1. repetitive rating : pulse width limited by maximum junction temperature. 2. pulse test : pulse width 300s, duty cycle 0.5%. 3. these parameters have no way to verify. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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